All MOSFET. NCE65T1K2D Datasheet

 

NCE65T1K2D Datasheet and Replacement


   Type Designator: NCE65T1K2D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO263
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NCE65T1K2D Datasheet (PDF)

 ..1. Size:599K  ncepower
 nce65t1k2 nce65t1k2d nce65t1k2f.pdf pdf_icon

NCE65T1K2D

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:476K  ncepower
 nce65t1k2i.pdf pdf_icon

NCE65T1K2D

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 5.2. Size:476K  ncepower
 nce65t1k2k.pdf pdf_icon

NCE65T1K2D

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 5.3. Size:476K  ncepower
 nce65t1k2k nce65t1k2i.pdf pdf_icon

NCE65T1K2D

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

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History: HM4616A | HLML6401 | IXFH9N80Q | HUF76609D3S | PHD101NQ03LT | TPCS8204 | AP85T03GH-HF

Keywords - NCE65T1K2D MOSFET datasheet

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