NCE65T260D MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE65T260D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 131 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24.7 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 74 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO263
NCE65T260D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE65T260D Datasheet (PDF)
nce65t260d.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t260d nce65t260 nce65t260f.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t260f nce65t260 nce65t260d.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t260f.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t260i nce65t260k.pdf
NCE65T260I,NCE65T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce65t260i.pdf
NCE65T260I,NCE65T260K,N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 220 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial powe
nce65t260k.pdf
NCE65T260I,NCE65T260K,N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 220 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial powe
nce65t260.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: FSS23AOD
History: FSS23AOD
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