All MOSFET. NCE65T260D Datasheet

 

NCE65T260D Datasheet and Replacement


   Type Designator: NCE65T260D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 131 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO263
 

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NCE65T260D Datasheet (PDF)

 ..1. Size:612K  ncepower
 nce65t260d.pdf pdf_icon

NCE65T260D

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:612K  ncepower
 nce65t260d nce65t260 nce65t260f.pdf pdf_icon

NCE65T260D

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:612K  ncepower
 nce65t260f nce65t260 nce65t260d.pdf pdf_icon

NCE65T260D

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:612K  ncepower
 nce65t260f.pdf pdf_icon

NCE65T260D

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

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Datasheet: NCE65T180 , NCE65T180F , NCE65T180T , NCE65T1K2 , NCE65T1K2D , NCE65T1K2F , NCE65T1K2K , NCE65T1K2I , IRLB3034 , NCE65T260 , NCE65T260F , NCE65T260I , NCE65T260K , NCE65T2K4I , NCE65T2K4K , NCE65T360D , NCE65T360 .

Keywords - NCE65T260D MOSFET datasheet

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