All MOSFET. NCE65T360F Datasheet

 

NCE65T360F Datasheet and Replacement


   Type Designator: NCE65T360F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220F
 

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NCE65T360F Datasheet (PDF)

 ..1. Size:611K  ncepower
 nce65t360d nce65t360 nce65t360f.pdf pdf_icon

NCE65T360F

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a

 ..2. Size:1699K  ncepower
 nce65t360f.pdf pdf_icon

NCE65T360F

NCE65T360D,NCE65T360,NCE65T360FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 290 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 ..3. Size:1699K  ncepower
 nce65t360f nce65t360 nce65t360d.pdf pdf_icon

NCE65T360F

NCE65T360D,NCE65T360,NCE65T360FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 290 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 5.1. Size:487K  ncepower
 nce65t360k nce65t360i.pdf pdf_icon

NCE65T360F

NCE65T360K,NCE65T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust

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Datasheet: NCE65T260 , NCE65T260F , NCE65T260I , NCE65T260K , NCE65T2K4I , NCE65T2K4K , NCE65T360D , NCE65T360 , AO3407 , NCE65T360K , NCE65T360I , NCE65T540D , NCE65T540 , NCE65T540F , NCE65T540I , NCE65T540K , NCE65T680D .

History: IRF6201PBF

Keywords - NCE65T360F MOSFET datasheet

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