NCE65T540 MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

NCE65T540 Specs and Replacement

Type Designator: NCE65T540

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: TO220

NCE65T540 substitution

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NCE65T540 datasheet

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NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

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0.1. Size:489K ncepower
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NCE65T540I NCE65T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒