FDD050N03B MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD050N03B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 33 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO252 DPAK
FDD050N03B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD050N03B Datasheet (PDF)
fdd050n03b.pdf
March 2010FDD050N03BN-Channel PowerTrench MOSFET 30V, 90A, 5mFeatures Description RDS(on) = 3.7m ( Typ.)@ VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance.
fdd050n03b.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd050n03b.pdf
isc N-Channel MOSFET Transistor FDD050N03BFEATURESDrain Current : I =90A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
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