All MOSFET. FDD050N03B Datasheet


FDD050N03B MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD050N03B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 33 nC

Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm

Package: TO252, DPAK

FDD050N03B Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FDD050N03B Datasheet (PDF)

0.1. fdd050n03b.pdf Size:717K _fairchild_semi


March 2010 FDD050N03B N-Channel PowerTrench® MOSFET 30V, 90A, 5mΩ Features Description • RDS(on) = 3.7mΩ ( Typ.)@ VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench process that has been espe- • Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


Back to Top