NCE65T900D MOSFET. Datasheet pdf. Equivalent

   Type Designator: NCE65T900D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO263

NCE65T900D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NCE65T900D Datasheet (PDF)

..1. Size:606K ncepower
nce65t900d nce65t900 nce65t900f.pdf

NCE65T900DNCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

5.1. Size:1403K ncepower
nce65t900k.pdf

NCE65T900INCE65T900KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 750 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow

5.2. Size:606K ncepower
nce65t900 nce65t900f.pdf

5.3. Size:450K ncepower
nce65t900i nce65t900k.pdf

NCE65T900INCE65T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 750 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industr

5.4. Size:1403K ncepower
nce65t900i.pdf