STU10N10 MOSFET. Datasheet pdf. Equivalent

STU10N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STU10N10 Datasheet (PDF)

0.1. stu10n10 std10n10.pdf Size:119K _samhop

STU10N10 Green Product STD10N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 620 @ VGS=10V TO-252 and TO-251 Package. 100V 5A 721 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( )

8.1. std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf Size:901K _st

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Order codes ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V < 0.55 Ω 10 A STP10NM60N 70 W STU10NM60N 3 ■ 100% avalanche tested 2 3 1 1 ■ Low input capacitance and gate charge

8.2. std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf Size:525K _st

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V < 0.48 Ω 9 A 1 IPAK STF10NM65N 710 V < 0.48 Ω 9 A(1) TO-220 STP10NM65N 710 V < 0.48 Ω 9 A STU10NM65N 710 V < 0.48 Ω 9 A 3 1. Limited only by maximum temperature all

 8.3. stu10nc70z.pdf Size:409K _st

STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STU10NC70Z 700 V <0.75Ω 9.4 A STU10NC70ZI 700 V <0.75Ω 9.4 A TYPICAL RDS(on) = 0.58Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 3 2 100% AVALANCHE TESTED 1 VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED I-Max220

8.4. stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf Size:1627K _st

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 Ω 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 • Extremely low gate ch

 8.5. stu10nb80.pdf Size:44K _st

STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STU10NB80 800 V < 0.8 Ω 10 A TYPICAL R = 0.65 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 DESCRIPTION 1 Using the latest high voltage MESH OVERLAY process, STMicroelectronics

8.6. std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf Size:997K _st

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Type ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V < 0.55 Ω 8 A STP10NM60N 70 W STU10NM60N 3 ■ 100% avalanche tested 2 3 1 1 ■ Low input capacitance and gate charge IPAK

8.7. stu10nm65n.pdf Size:523K _st

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V < 0.48 Ω 9 A 1 IPAK STF10NM65N 710 V < 0.48 Ω 9 A(1) TO-220 STP10NM65N 710 V < 0.48 Ω 9 A STU10NM65N 710 V < 0.48 Ω 9 A 3 1. Limited only by maximum temperature all

8.8. stu10na50.pdf Size:73K _st

STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STU10NA50 500 V < 0.6 Ω 10.2 A TYPICAL R = 0.5 Ω DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED 3 GATE CHARGE MINIMIZED 2 1 REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION Max220TM The Max220

8.9. stu10n20 std10n20.pdf Size:120K _samhop

STU10N20 Green Product STD10N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 306 @ VGS=10V TO-252 and TO-251 Package. 200V 8A 328 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK (

8.10. stu10n25 std10n25.pdf Size:128K _samhop

STU10N25 Green Product STD10N25 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 250V 9A 258 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABS

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