STU10N10
MOSFET. Datasheet pdf. Equivalent
Type Designator: STU10N10
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 5
A
Qgⓘ - Total Gate Charge: 2.3
nC
Cossⓘ -
Output Capacitance: 22
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62
Ohm
Package:
TO252
DPAK
STU10N10
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STU10N10
Datasheet (PDF)
..1. Size:119K samhop
stu10n10 std10n10.pdf 
STU10N10GreenProductSTD10N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.620 @ VGS=10VTO-252 and TO-251 Package.100V 5A721 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )
8.1. Size:1627K st
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch
8.2. Size:901K st
std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf
STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V
8.3. Size:73K st
stu10na50.pdf
STU10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTU10NA50 500 V
8.4. Size:997K st
std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf
STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V
8.5. Size:409K st
stu10nc70z.pdf
STU10NC70ZSTU10NC70ZIN-CHANNEL 700V - 0.58 - 9.4A Max220/I-Max220Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTU10NC70Z 700 V
8.6. Size:44K st
stu10nb80.pdf
STU10NB80N - CHANNEL 800V - 0.65 - 10A - Max220PowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTU10NB80 800 V
8.7. Size:1072K st
std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf
STD10NM60N, STF10NM60N,STI10NM60N, STP10NM60N, STU10NM60NN-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTABVDSS RDS(on) Order codes ID Pw@TJmax max.313STD10NM60N 70 W 3221DPAK 1STF10NM60N 25 WIPAKTO-220FPSTI10NM60N 650 V
8.8. Size:525K st
std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf
STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V
8.9. Size:523K st
stu10nm65n.pdf
STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V
8.10. Size:120K samhop
stu10n20 std10n20.pdf
STU10N20GreenProductSTD10N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.306 @ VGS=10VTO-252 and TO-251 Package.200V8A328 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (
8.11. Size:128K samhop
stu10n25 std10n25.pdf
STU10N25GreenProductSTD10N25aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.250V 9A 258 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKABS
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