NCE65T900K Specs and Replacement

Type Designator: NCE65T900K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

NCE65T900K substitution

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NCE65T900K datasheet

 ..1. Size:1403K  ncepower
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NCE65T900K

NCE65T900I NCE65T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 750 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial pow... See More ⇒

 ..2. Size:450K  ncepower
nce65t900i nce65t900k.pdf pdf_icon

NCE65T900K

NCE65T900I NCE65T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 750 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industr... See More ⇒

 5.1. Size:606K  ncepower
nce65t900 nce65t900f.pdf pdf_icon

NCE65T900K

NCE65T900D NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒

 5.2. Size:606K  ncepower
nce65t900d nce65t900 nce65t900f.pdf pdf_icon

NCE65T900K

NCE65T900D NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒

Detailed specifications: NCE65T680, NCE65T680F, NCE65T680I, NCE65T680K, NCE65T900D, NCE65T900, NCE65T900F, NCE65T900I, IRLZ44N, NCE65TF041T, NCE65TF068T, NCE65TF099D, NCE65TF099, NCE65TF099F, NCE65TF099T, NCE65TF130D, NCE65TF130

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