All MOSFET. NCE65T900K Datasheet

 

NCE65T900K Datasheet and Replacement


   Type Designator: NCE65T900K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO252
 

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NCE65T900K Datasheet (PDF)

 ..1. Size:1403K  ncepower
 nce65t900k.pdf pdf_icon

NCE65T900K

NCE65T900INCE65T900KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 750 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow

 ..2. Size:450K  ncepower
 nce65t900i nce65t900k.pdf pdf_icon

NCE65T900K

NCE65T900INCE65T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 750 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industr

 5.1. Size:606K  ncepower
 nce65t900 nce65t900f.pdf pdf_icon

NCE65T900K

NCE65T900DNCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.2. Size:606K  ncepower
 nce65t900d nce65t900 nce65t900f.pdf pdf_icon

NCE65T900K

NCE65T900DNCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

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Datasheet: NCE65T680 , NCE65T680F , NCE65T680I , NCE65T680K , NCE65T900D , NCE65T900 , NCE65T900F , NCE65T900I , IRFP260N , NCE65TF041T , NCE65TF068T , NCE65TF099D , NCE65TF099 , NCE65TF099F , NCE65TF099T , NCE65TF130D , NCE65TF130 .

History: NCEP30T19G | SW4N70B | LNG05R100

Keywords - NCE65T900K MOSFET datasheet

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