All MOSFET. NCE65TF041T Datasheet

 

NCE65TF041T Datasheet and Replacement


   Type Designator: NCE65TF041T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 510 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 252 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO247
 

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NCE65TF041T Datasheet (PDF)

 ..1. Size:363K  ncepower
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NCE65TF041T

NCE65TF041T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

 6.1. Size:1480K  ncepower
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NCE65TF041T

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 6.2. Size:1480K  ncepower
nce65tf099d.pdf pdf_icon

NCE65TF041T

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 6.3. Size:578K  ncepower
nce65tf099d nce65tf099 nce65tf099f.pdf pdf_icon

NCE65TF041T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a

Datasheet: NCE65T680F , NCE65T680I , NCE65T680K , NCE65T900D , NCE65T900 , NCE65T900F , NCE65T900I , NCE65T900K , IRF640N , NCE65TF068T , NCE65TF099D , NCE65TF099 , NCE65TF099F , NCE65TF099T , NCE65TF130D , NCE65TF130 , NCE65TF130F .

History: LPM9029C

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