NCE65TF130 Datasheet. Specs and Replacement

Type Designator: NCE65TF130  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO220

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NCE65TF130 substitution

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NCE65TF130 datasheet

 ..1. Size:1828K  ncepower
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NCE65TF130

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind... See More ⇒

 ..2. Size:1828K  ncepower
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NCE65TF130

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind... See More ⇒

 ..3. Size:623K  ncepower
nce65tf130d nce65tf130 nce65tf130f.pdf pdf_icon

NCE65TF130

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, ... See More ⇒

 0.1. Size:423K  1
nce65tf130t.pdf pdf_icon

NCE65TF130

NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap... See More ⇒

Detailed specifications: NCE65T900K, NCE65TF041T, NCE65TF068T, NCE65TF099D, NCE65TF099, NCE65TF099F, NCE65TF099T, NCE65TF130D, 10N60, NCE65TF130F, NCE65TF180D, NCE65TF180, NCE65TF180F, NCE65TF180T, NCE65TF360D, NCE65TF360, NCE65TF360F

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