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NCE65TF130 Specs and Replacement


   Type Designator: NCE65TF130
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO220
 

 NCE65TF130 substitution

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NCE65TF130 Specs

 ..1. Size:1828K  ncepower
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NCE65TF130

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind... See More ⇒

 ..2. Size:1828K  ncepower
 nce65tf130f nce65tf130 nce65tf130d.pdf pdf_icon

NCE65TF130

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind... See More ⇒

 ..3. Size:623K  ncepower
 nce65tf130d nce65tf130 nce65tf130f.pdf pdf_icon

NCE65TF130

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, ... See More ⇒

 0.1. Size:423K  1
 nce65tf130t.pdf pdf_icon

NCE65TF130

NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap... See More ⇒

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Detailed specifications: NCE65T900K , NCE65TF041T , NCE65TF068T , NCE65TF099D , NCE65TF099 , NCE65TF099F , NCE65TF099T , NCE65TF130D , AON6414A , NCE65TF130F , NCE65TF180D , NCE65TF180 , NCE65TF180F , NCE65TF180T , NCE65TF360D , NCE65TF360 , NCE65TF360F .

Keywords - NCE65TF130 MOSFET specs

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