All MOSFET. NCE65TF360D Datasheet

 

NCE65TF360D Datasheet and Replacement


   Type Designator: NCE65TF360D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO263
 

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NCE65TF360D Datasheet (PDF)

 ..1. Size:607K  ncepower
nce65tf360f nce65tf360 nce65tf360d.pdf pdf_icon

NCE65TF360D

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion

 ..2. Size:607K  ncepower
nce65tf360d nce65tf360 nce65tf360f.pdf pdf_icon

NCE65TF360D

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion

 ..3. Size:607K  ncepower
nce65tf360d.pdf pdf_icon

NCE65TF360D

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion

 4.1. Size:607K  ncepower
nce65tf360.pdf pdf_icon

NCE65TF360D

NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion

Datasheet: NCE65TF099T , NCE65TF130D , NCE65TF130 , NCE65TF130F , NCE65TF180D , NCE65TF180 , NCE65TF180F , NCE65TF180T , AON7408 , NCE65TF360 , NCE65TF360F , NCE6802 , NCE6890 , NCE6890K , NCE6990 , NCE6990D , NCE70T180D .

History: NCE65TF099 | SL2026 | HPMB84A | NCE65NF130LL | IRFP3206

Keywords - NCE65TF360D MOSFET datasheet

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