NCE65TF360D Datasheet and Replacement
Type Designator: NCE65TF360D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 101
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 11.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 54
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36
Ohm
Package:
TO263
- MOSFET Cross-Reference Search
NCE65TF360D Datasheet (PDF)
..1. Size:607K ncepower
nce65tf360f nce65tf360 nce65tf360d.pdf 
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
..2. Size:607K ncepower
nce65tf360d nce65tf360 nce65tf360f.pdf 
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
..3. Size:607K ncepower
nce65tf360d.pdf 
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
4.1. Size:607K ncepower
nce65tf360.pdf 
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
4.2. Size:607K ncepower
nce65tf360f.pdf 
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
7.1. Size:423K 1
nce65tf130t.pdf 
NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
7.2. Size:1721K ncepower
nce65tf180f.pdf 
NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i
7.3. Size:620K ncepower
nce65tf180f nce65tf180 nce65tf180d.pdf 
NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,
7.4. Size:1828K ncepower
nce65tf130d.pdf 
NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind
7.5. Size:1480K ncepower
nce65tf099.pdf 
NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
7.6. Size:1828K ncepower
nce65tf130.pdf 
NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind
7.7. Size:1334K ncepower
nce65tf130t.pdf 
NCE65TF130TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applicati
7.8. Size:1480K ncepower
nce65tf099d.pdf 
NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
7.9. Size:417K ncepower
nce65tf180t.pdf 
NCE65TF180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl
7.10. Size:578K ncepower
nce65tf099d nce65tf099 nce65tf099f.pdf 
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a
7.11. Size:1480K ncepower
nce65tf099f nce65tf099 nce65tf099d.pdf 
NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
7.12. Size:1828K ncepower
nce65tf130f.pdf 
NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind
7.13. Size:1721K ncepower
nce65tf180d.pdf 
NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i
7.14. Size:1828K ncepower
nce65tf130f nce65tf130 nce65tf130d.pdf 
NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind
7.15. Size:623K ncepower
nce65tf130d nce65tf130 nce65tf130f.pdf 
NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,
7.16. Size:400K ncepower
nce65tf068t.pdf 
NCE65TF068T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 62 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 53 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
7.17. Size:403K ncepower
nce65tf099t.pdf 
NCE65TF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app
7.18. Size:618K ncepower
nce65tf180d nce65tf180 nce65tf180f.pdf 
NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) typ.with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
7.19. Size:1721K ncepower
nce65tf180.pdf 
NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i
7.20. Size:1480K ncepower
nce65tf099f.pdf 
NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
7.21. Size:871K ncepower
nce65tf078t.pdf 
NCE65TF078TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 62 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
7.22. Size:363K ncepower
nce65tf041t.pdf 
NCE65TF041T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
History: CHM85A3PAGP
| STU20L01
| M7002NND03
| SFFX054Z
Keywords - NCE65TF360D MOSFET datasheet
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