All MOSFET. FDD120AN15A0 Datasheet


FDD120AN15A0 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD120AN15A0

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 11.2 nC

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: TO252, DPAK

FDD120AN15A0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FDD120AN15A0 Datasheet (PDF)

0.1. fdp120an15a0 fdd120an15a0.pdf Size:251K _fairchild_semi


September 2002 FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ Features Applications • rDS(ON) = 101mΩ (Typ.), VGS = 10V, ID = 4A • DC/DC Converters and Off-line UPS • Qg(tot) = 11.2nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low Qrr Body Diode • High Volta

4.1. fdd120an15 f085.pdf Size:365K _fairchild_semi


June 2013 FDD120AN15A0_F085 N-Channel Power Trench® MOSFET D 150V, 14A, 120mΩ Features Typ rDS(on) = 90.5mΩ at VGS = 10V, ID = 4A G Typ Qg(tot) = 11.3nC at VGS = 10V, ID = 4A UIS Capability RoHS Compliant S Qualified to AEC Q101 Applications For current package drawing, please refer to the Fairchild  website at Automotive E


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