NCE70T900 Specs and Replacement

Type Designator: NCE70T900

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO220

NCE70T900 substitution

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NCE70T900 datasheet

 ..1. Size:707K  ncepower
 nce70t900 nce70t900f.pdf pdf_icon

NCE70T900

NCE70T900D NCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 ..2. Size:609K  ncepower
 nce70t900d nce70t900 nce70t900f.pdf pdf_icon

NCE70T900

NCE70T900D NCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 820 m with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒

 ..3. Size:707K  ncepower
 nce70t900.pdf pdf_icon

NCE70T900

NCE70T900D NCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 0.1. Size:439K  ncepower
 nce70t900i.pdf pdf_icon

NCE70T900

NCE70T900I NCE70T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

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Detailed specifications: NCE70T360K, NCE70T360I, NCE70T540I, NCE70T540K, NCE70T680D, NCE70T680, NCE70T680F, NCE70T900D, STP80NF70, NCE70T900F, NCE70T900I, NCE70T900K, NCE7190A, NCE7560K, NCE80H12, NCE80H12D, NCE80H15

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