All MOSFET. NCE70T900F Datasheet

 

NCE70T900F Datasheet and Replacement


   Type Designator: NCE70T900F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220F
 

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NCE70T900F Datasheet (PDF)

 ..1. Size:707K  ncepower
 nce70t900 nce70t900f.pdf pdf_icon

NCE70T900F

NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 Aindustrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:707K  ncepower
 nce70t900f.pdf pdf_icon

NCE70T900F

NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 Aindustrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:609K  ncepower
 nce70t900d nce70t900 nce70t900f.pdf pdf_icon

NCE70T900F

NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) RDS(ON)TYP 820 m with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:439K  ncepower
 nce70t900i.pdf pdf_icon

NCE70T900F

NCE70T900INCE70T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

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Datasheet: NCE70T360I , NCE70T540I , NCE70T540K , NCE70T680D , NCE70T680 , NCE70T680F , NCE70T900D , NCE70T900 , IRF1407 , NCE70T900I , NCE70T900K , NCE7190A , NCE7560K , NCE80H12 , NCE80H12D , NCE80H15 , NCE80H16 .

History: STB35NF10T4

Keywords - NCE70T900F MOSFET datasheet

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