NCE7560K MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE7560K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 100 nC
trⓘ - Rise Time: 11.8 nS
Cossⓘ - Output Capacitance: 340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO252
NCE7560K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE7560K Datasheet (PDF)
nce7560k.pdf
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NCE7560Khttp://www.ncepower.com Pb-Free ProductNCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7560K uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate RDS(ON) typ. 6.8 m charge. It can be used in a wide variety of applications. max. 8.5 m ID 60 A Features VDS=75V
nce7580.pdf
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NCE7580http://www.ncepower.com Pb-Free ProductNCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7580 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applicatio
nce75ts120vtp.pdf
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PbFreeProduct NCE75TS120VTP 1200V, 75A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s
nce75h25t.pdf
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http://www.ncepower.comNCE75H25TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE75H25T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR
nce75h21t.pdf
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Pb Free Producthttp://www.ncepower.com NCE75H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
nce75h21.pdf
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http://www.ncepower.com NCE75H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
nce7580.pdf
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NCE7580http://www.ncepower.com Pb-Free ProductNCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7580 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applicatio
nce75h25.pdf
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http://www.ncepower.comNCE75H25NCE N-Channel Enhancement Mode Power MOSFET (Primary)DescriptionThe NCE75H25 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR
nce75td120vtp.pdf
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PbFreeProduct NCE75TD120VTP 1200V, 75A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s
nce75h21d.pdf
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http://www.ncepower.com NCE75H21DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
nce75h35tc.pdf
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Pb Free Producthttp://www.ncepower.com NCE75H35TCNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =350A Schematic diagram RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .