NCE80H12 Datasheet and Replacement
Type Designator: NCE80H12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 520 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220
NCE80H12 substitution
NCE80H12 Datasheet (PDF)
nce80h12.pdf

Pb Free Producthttp://www.ncepower.com NCE80H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)
nce80h12d.pdf

Pb Free Producthttp://www.ncepower.com NCE80H12DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)
nce80h11.pdf

Pb Free Producthttp://www.ncepower.com NCE80H11NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)
nce80h15.pdf

Pb Free Producthttp://www.ncepower.com NCE80H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)
Datasheet: NCE70T680F , NCE70T900D , NCE70T900 , NCE70T900F , NCE70T900I , NCE70T900K , NCE7190A , NCE7560K , STF13NM60N , NCE80H12D , NCE80H15 , NCE80H16 , NCE80T320D , NCE80T320 , NCE80T320F , NCE80T420 , NCE80T420F .
Keywords - NCE80H12 MOSFET datasheet
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