All MOSFET. NCE80H12 Datasheet

 

NCE80H12 Datasheet and Replacement


   Type Designator: NCE80H12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 163 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO220
 

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NCE80H12 Datasheet (PDF)

 ..1. Size:337K  ncepower
 nce80h12.pdf pdf_icon

NCE80H12

Pb Free Producthttp://www.ncepower.com NCE80H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

 0.1. Size:299K  ncepower
 nce80h12d.pdf pdf_icon

NCE80H12

Pb Free Producthttp://www.ncepower.com NCE80H12DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

 7.1. Size:361K  1
 nce80h11.pdf pdf_icon

NCE80H12

Pb Free Producthttp://www.ncepower.com NCE80H11NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)

 7.2. Size:413K  ncepower
 nce80h15.pdf pdf_icon

NCE80H12

Pb Free Producthttp://www.ncepower.com NCE80H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)

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