NCE80H15 Datasheet and Replacement
Type Designator: NCE80H15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 163 nC
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 520 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220
NCE80H15 substitution
NCE80H15 Datasheet (PDF)
nce80h15.pdf

Pb Free Producthttp://www.ncepower.com NCE80H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)
nce80h11.pdf

Pb Free Producthttp://www.ncepower.com NCE80H11NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)
nce80h12.pdf

Pb Free Producthttp://www.ncepower.com NCE80H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)
nce80h16.pdf

Pb Free Producthttp://www.ncepower.com NCE80H16NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =160A RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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