All MOSFET. NCE80T320D Datasheet

 

NCE80T320D Datasheet and Replacement


   Type Designator: NCE80T320D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 265 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO263
 

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NCE80T320D Datasheet (PDF)

 ..1. Size:610K  ncepower
nce80t320d.pdf pdf_icon

NCE80T320D

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:610K  ncepower
nce80t320d nce80t320 nce80t320f.pdf pdf_icon

NCE80T320D

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:610K  ncepower
nce80t320f nce80t320 nce80t320d.pdf pdf_icon

NCE80T320D

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:610K  ncepower
nce80t320f.pdf pdf_icon

NCE80T320D

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

Datasheet: NCE70T900I , NCE70T900K , NCE7190A , NCE7560K , NCE80H12 , NCE80H12D , NCE80H15 , NCE80H16 , 13N50 , NCE80T320 , NCE80T320F , NCE80T420 , NCE80T420F , NCE80T560D , NCE80T560 , NCE80T560F , NCE80T900D .

History: STU2030PLS | ZXM62P03E6 | NP40N055KHE | 2SK2327

Keywords - NCE80T320D MOSFET datasheet

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