NCE80T560D MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE80T560D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 131 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 75 pF
Maximum Drain-Source On-State Resistance (Rds): 0.56 Ohm
Package: TO263
NCE80T560D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE80T560D Datasheet (PDF)
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NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
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nce80td65bp nce80td65bt.pdf
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