NCE80T900D Specs and Replacement
Type Designator: NCE80T900D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ -
Output Capacitance: 33 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO263
- MOSFET ⓘ Cross-Reference Search
NCE80T900D datasheet
..1. Size:605K ncepower
nce80t900d nce80t900 nce80t900f.pdf 
NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 900 m DS(ON)MAX with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
8.1. Size:661K 1
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat ... See More ⇒
8.2. Size:613K ncepower
nce80t560d nce80t560 nce80t560f.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒
8.3. Size:1464K ncepower
nce80td60bt.pdf
Pb Free Product NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
8.4. Size:610K ncepower
nce80t320d.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
8.5. Size:610K ncepower
nce80t320f.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
8.6. Size:1542K ncepower
nce80td65bp.pdf
Pb Free Product NCE80TD65BP 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
8.7. Size:613K ncepower
nce80t560f nce80t560 nce80t560d.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒
8.8. Size:532K ncepower
nce80t420.pdf
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria... See More ⇒
8.9. Size:610K ncepower
nce80t320d nce80t320 nce80t320f.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
8.10. Size:660K ncepower
nce80td60bp nce80td60bt.pdf
PbFreeProduct NCE80TD60BP,NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H... See More ⇒
8.11. Size:610K ncepower
nce80t320.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
8.12. Size:532K ncepower
nce80t420 nce80t420f.pdf
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria... See More ⇒
8.13. Size:661K ncepower
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat ... See More ⇒
8.14. Size:613K ncepower
nce80t560d.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒
8.15. Size:532K ncepower
nce80t420f.pdf
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria... See More ⇒
8.16. Size:610K ncepower
nce80t320f nce80t320 nce80t320d.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
8.17. Size:613K ncepower
nce80t560f.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒
8.18. Size:1449K ncepower
nce80tc65bt.pdf
Pb Free Product NCE80TC65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
8.20. Size:613K ncepower
nce80t560.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒
8.21. Size:1655K ncepower
nce80td65bt.pdf
Pb Free Product NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
8.22. Size:1423K ncepower
nce80td60bp.pdf
Pb Free Product NCE80TD60BP 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
Detailed specifications: NCE80T320D, NCE80T320, NCE80T320F, NCE80T420, NCE80T420F, NCE80T560D, NCE80T560, NCE80T560F, STF13NM60N, NCE80T900, NCE80T900F, NCE8205, NCE8205A, NCE8205I, NCE8205t, NCE8290AC, NCE8295A
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