NCE80T900D MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE80T900D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22.8 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 33 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO263
NCE80T900D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE80T900D Datasheet (PDF)
nce80t900d nce80t900 nce80t900f.pdf
NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 900 m DS(ON)MAX with low gate charge. This super junction MOSFET fits the ID 6 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce80t560d nce80t560 nce80t560f.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80td60bt.pdf
Pb Free ProductNCE80TD60BT600V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce80t320d.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80t320f.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80td65bp.pdf
Pb Free ProductNCE80TD65BP650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce80t560f nce80t560 nce80t560d.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80t420.pdf
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 11 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
nce80t320d nce80t320 nce80t320f.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80td60bp nce80td60bt.pdf
PbFreeProduct NCE80TD60BP,NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H
nce80t320.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80t420 nce80t420f.pdf
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 11 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce80t560d.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80t420f.pdf
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 11 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
nce80t320f nce80t320 nce80t320d.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80t560f.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80tc65bt.pdf
Pb Free ProductNCE80TC65BT650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce80td65bt4.pdf
Pb Free ProductNCE80TD65BT4650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce80t560.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80td65bt.pdf
Pb Free ProductNCE80TD65BT650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce80td60bp.pdf
Pb Free ProductNCE80TD60BP600V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AOTF262L
History: AOTF262L
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918