All MOSFET. NCEP0114AS Datasheet

 

NCEP0114AS Datasheet and Replacement


   Type Designator: NCEP0114AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 354 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP8
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NCEP0114AS Datasheet (PDF)

 ..1. Size:440K  ncepower
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NCEP0114AS

Pb Free Producthttp://www.ncepower.com NCEP0114ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0114AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.1. Size:412K  ncepower
 ncep0116as.pdf pdf_icon

NCEP0114AS

Pb Free Producthttp://www.ncepower.com NCEP0116ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.2. Size:671K  ncepower
 ncep011n25qu.pdf pdf_icon

NCEP0114AS

http://www.ncepower.com NCEP011N25QUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP011NH25QU uses Super Trench II technologyV =25V,I =161ADS Dthat is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5VDS(ON) GSswitching p

 7.3. Size:313K  ncepower
 ncep0116k.pdf pdf_icon

NCEP0114AS

http://www.ncepower.com NCEP0116KNCE N-Channel Super Trench Power MOSFET Description The NCEP0116K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

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Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 2SJ473-01S | IRF7759L2TR1PBF

Keywords - NCEP0114AS MOSFET datasheet

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