NCEP0120Q MOSFET. Datasheet pdf. Equivalent

http://www.ncepower.com NCEP0120QNCE N-Channel Super Trench Power MOSFET Description The NCEP0120Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =20A frequency switching performance. Both conduction and RDS(ON)=36m (typical) @ VGS=10V switching power losses are minimized due to an extremely low E

NCEP012N85LLNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =400ADS Duniquely optimized to provide the most efficient high frequency R =1.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination

Pb Free Producthttp://www.ncepower.com NCEP0178DNCE N-Channel Super Trench Power MOSFET Description The NCEP0178D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

NCEP018N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60AGU uses Super Trench II technology that V =60V,I =195ADS Dis uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5VDS(ON) GSswitchi

http://www.ncepower.com NCEP0160AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

Pb Free Producthttp://www.ncepower.com NCEP01T11DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Pb Free Producthttp://www.ncepower.com NCEP0140AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0140AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Pb Free Producthttp://www.ncepower.com NCEP0135ANCE N-Channel Super Trench Power MOSFET Description The NCEP0135A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

Pb Free Producthttp://www.ncepower.com NCEP01T13ADNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Pb Free Producthttp://www.ncepower.com NCEP0178FNCE N-Channel Super Trench Power MOSFET Description The NCEP0178F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.com NCEP0109ARNCE N-Channel Super Trench Power MOSFET Description The NCEP0109AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

http://www.ncepower.com NCEP01T10GNCE N-Channel Super Trench Power MOSFET Description The NCEP01T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Pb Free Producthttp://www.ncepower.com NCEP01T18DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

NCEP018N85LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.3m , typical @ VGS=10V losses are minimized due to an extremely low combina

Pb Free Producthttp://www.ncepower.com NCEP0160ANCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche

Pb Free Producthttp://www.ncepower.com NCEP01T11NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

Pb Free Producthttp://www.ncepower.com NCEP0190GNCE N-Channel Super Trench Power MOSFET Description The NCEP0190G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.com NCEP01T25TNCE N-Channel Super Trench Power MOSFET Description The NCEP01T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

http://www.ncepower.com NCEP015N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @

Pb Free Producthttp://www.ncepower.com NCEP01T13ANCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.com NCEP01T25LLNCE N-Channel Super Trench Power MOSFET Description The NCEP01T25LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =250A frequency switching performance. Both conduction and RDS(ON)=2.2m (typical) @ VGS=10V switching power losses are minimized due to an extremely l

Pb Free Producthttp://www.ncepower.com NCEP01P35ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-

Pb Free ProductNCEP016N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =385ADS Dswitching performance. Both conduction and switching power R =1.2m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem

http://www.ncepower.com NCEP01T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

NCEP013NH40GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP013NH40GU uses Super Trench III technology V =40V,I =276ADS Dthat is uniquely optimized to provide the most efficient highR =0.95m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =1.35m (typical) @ V =4.5VD

http://www.ncepower.com NCEP0155AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0155AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

http://www.ncepower.com NCEP014NH60GUNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP014NH60GU uses Super Trench III technology that V =60V,I =318ADS Dis uniquely optimized to provide the most efficient highR =1.3m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and Excellent gate charge x R product(FOM)DS

Pb Free Producthttp://www.ncepower.com NCEP01P60GNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60G uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =22m (typical) @ V =-10VDS(ON) GSlosses are minimized due to

http://www.ncepower.com NCEP0135AFNCE N-Channel Super Trench Power MOSFET Description The NCEP0135AFuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

http://www.ncepower.com NCEP018N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.4m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.0m (typical) @

Pb Free ProductNCEP016N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =360ADS Dswitching performance. Both conduction and switching power R =1.2m , typical @ V =10VDS(ON) GSlosses are minimized due to an extrem

NCEP018N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =320ADS Dswitching performance. Both conduction and switching power R =1.7m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat

Pb Free Producthttp://www.ncepower.com NCEP0116ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

http://www.ncepower.com NCEP01P35AGNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-35ADS Dswitching performance. Both conduction and switching power R =37m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely l

NCEP016N60VDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =305ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

Pb Free Producthttp://www.ncepower.com NCEP01T18NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.comNCEP018NH30QUNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP018NH30QU uses Super Trench III technologyV =30V,I =144ADS Dthat is uniquely optimized to provide the most efficient highR =1.4m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =2.0m (typical) @ V =10VDS(ON) GSswitc

http://www.ncepower.com NCEP01ND35AGNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP01ND35AG uses Super Trench technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high RDS(ON)=18m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=22m (typical) @ VGS=4.5V switching power losses are

http://www.ncepower.comNCEP0107RNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP0107R uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequencyDS(ON) gswitchin

http://www.ncepower.com NCEP0160NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

http://www.ncepower.com NCEP0107ARNCE N-Channel Super Trench Power MOSFET Description The NCEP0107AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

Pb Free Producthttp://www.ncepower.com NCEP0178AKNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.com NCEP011N25QUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP011NH25QU uses Super Trench II technologyV =25V,I =161ADS Dthat is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5VDS(ON) GSswitching p

Pb Free Producthttp://www.ncepower.com NCEP0140ALNCE N-Channel Super Trench Power MOSFET Description The NCEP0140AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

http://www.ncepower.com NCEP01P40AGUNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P40AGU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-40ADS Dswitching performance. Both conduction and switching power R =35m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely

Pb Free Producthttp://www.ncepower.com NCEP01T13BDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

NCEP019N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =340ADS Dswitching performance. Both conduction and switching power R =2.0m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinatio

NCEP018N60GUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60GU uses Super Trench II technology that is V =60V,I =195ADS Duniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

http://www.ncepower.com NCEP0160GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP0160G uses Super Trench technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high RDS(ON)

http://www.ncepower.com NCEP0178ALNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Pb Free Producthttp://www.ncepower.com NCEP01T13BNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

NCEP015N60LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =340ADS Dswitching performance. Both conduction and switching power R =1.0m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

Pb Free Producthttp://www.ncepower.com NCEP01T15NCE N-Channel Super Trench Power MOSFET Description The NCEP01T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

Pb Free Producthttp://www.ncepower.com NCEP01T13DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

http://www.ncepower.com NCEP0116KNCE N-Channel Super Trench Power MOSFET Description The NCEP0116K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

Pb Free Producthttp://www.ncepower.com NCEP0160FNCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

Pb Free Producthttp://www.ncepower.com NCEP01T30TNCE N-Channel Super Trench Power MOSFET Description The NCEP01T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.com NCEP011N25QUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP011NH25QU uses Super Trench II technologyV =25V,I =161ADS Dthat is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5VDS(ON) GSswitching p

Pb Free Producthttp://www.ncepower.com NCEP0112ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0112AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Pb Free Producthttp://www.ncepower.com NCEP0135AKNCE N-Channel Super Trench Power MOSFET Description The NCEP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

NCEP015NH30AQUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AQU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =174ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a

NCEP015NH30AGUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AGU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =180ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a

Pb Free Producthttp://www.ncepower.com NCEP0178AFNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

Pb Free Producthttp://www.ncepower.com NCEP01T12NCE N-Channel Super Trench Power MOSFET Description The NCEP01T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.com NCEP01T18VDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

Pb Free Producthttp://www.ncepower.com NCEP0178NCE N-Channel Super Trench Power MOSFET Description The NCEP0178 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

http://www.ncepower.com NCEP01T13LLNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =160A frequency switching performance. Both conduction and RDS(ON)=3.3m , typical@ VGS=10V switching power losses are minimized due to an extremely l

http://www.ncepower.com NCEP011N25QUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP011NH25QU uses Super Trench II technologyV =25V,I =161ADS Dthat is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5VDS(ON) GSswitching p

NCEP015N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =370ADS Duniquely optimized to provide the most efficient high frequencyR =1.1m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM)DS(on)lo

NCEP01P60AGhttp://www.ncepower.comNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =19.5m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremel

Pb Free Producthttp://www.ncepower.com NCEP01T18TNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

NCEP015NH30GUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP015NH30GU uses Super Trench III technologyV =30V,I =189ADS Dthat is uniquely optimized to provide the most efficient highR =1.25m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =1.7m (typical) @ V =4.5VDS(ON) GSswi

Pb Free Producthttp://www.ncepower.com NCEP0178ANCE N-Channel Super Trench Power MOSFET Description The NCEP0178A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

Pb Free Producthttp://www.ncepower.com NCEP01P35AKNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AK uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

Pb Free Producthttp://www.ncepower.com NCEP0114ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0114AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for