All MOSFET. NCEP0135A Datasheet

 

NCEP0135A Datasheet and Replacement


   Type Designator: NCEP0135A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 139 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO220
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NCEP0135A Datasheet (PDF)

 ..1. Size:396K  ncepower
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NCEP0135A

Pb Free Producthttp://www.ncepower.com NCEP0135ANCE N-Channel Super Trench Power MOSFET Description The NCEP0135A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.1. Size:374K  ncepower
 ncep0135af.pdf pdf_icon

NCEP0135A

http://www.ncepower.com NCEP0135AFNCE N-Channel Super Trench Power MOSFET Description The NCEP0135AFuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

 0.2. Size:460K  ncepower
 ncep0135ak.pdf pdf_icon

NCEP0135A

Pb Free Producthttp://www.ncepower.com NCEP0135AKNCE N-Channel Super Trench Power MOSFET Description The NCEP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.1. Size:687K  ncepower
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NCEP0135A

NCEP013NH40GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP013NH40GU uses Super Trench III technology V =40V,I =276ADS Dthat is uniquely optimized to provide the most efficient highR =0.95m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =1.35m (typical) @ V =4.5VD

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: QM6008P

Keywords - NCEP0135A MOSFET datasheet

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