NCEP020N30GU MOSFET Datasheet: N-Ch, 30V, 100A. Full specification with pinout and replacement list

NCEP020N30GU Specs and Replacement

Type Designator: NCEP020N30GU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 1700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: DFN5X6-8L

NCEP020N30GU substitution

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NCEP020N30GU datasheet

..1. Size:359K ncepower
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http //www.ncepower.com NCEP020N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.75m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.0m (typical) @... See More ⇒

4.1. Size:809K ncepower
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http //www.ncepower.com NCEP020N30QU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =30V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =1.75m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.0m (typical) @ V =4.5V... See More ⇒

4.2. Size:510K ncepower
ncep020n30bqu.pdf pdf_icon

http //www.ncepower.com NCEP3065BQU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065BQU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc... See More ⇒

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NCEP020N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =180A DS D The NCEP020N60AGU uses Super Trench II technology that R =1.8 m (typical) @ V =10V DS(ON) GS is uniquely optimized to provide the most efficient high R =2.5 m (typical) @ V =4.5V DS(ON) GS frequency switching performance. Both conduction and ... See More ⇒