NCEP023N10 MOSFET Datasheet: N-Ch, 100V, 240A. Full specification with pinout and replacement list

NCEP023N10 Specs and Replacement

Type Designator: NCEP023N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 340 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 240 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: TO220

NCEP023N10 substitution

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NCEP023N10 datasheet

..1. Size:635K ncepower
ncep023n10 ncep023n10d.pdf pdf_icon

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

..2. Size:855K ncepower
ncep023n10.pdf pdf_icon

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

0.1. Size:855K ncepower
ncep023n10d.pdf pdf_icon

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

0.2. Size:2030K ncepower
ncep023n10t.pdf pdf_icon

NCEP023N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =280A DS D switching performance. Both conduction and switching power R =1.85m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinati... See More ⇒