All MOSFET. NCEP023N10 Datasheet

 

NCEP023N10 Datasheet and Replacement


   Type Designator: NCEP023N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 340 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 240 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO220
 

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NCEP023N10 Datasheet (PDF)

 ..1. Size:635K  ncepower
 ncep023n10 ncep023n10d.pdf pdf_icon

NCEP023N10

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 ..2. Size:855K  ncepower
 ncep023n10.pdf pdf_icon

NCEP023N10

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =240ADS Dswitching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 0.1. Size:855K  ncepower
 ncep023n10d.pdf pdf_icon

NCEP023N10

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =240ADS Dswitching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 0.2. Size:2030K  ncepower
 ncep023n10t.pdf pdf_icon

NCEP023N10

NCEP023N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =280ADS Dswitching performance. Both conduction and switching power R =1.85m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

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Datasheet: NCEP01T13 , NCEP01T13A , NCEP01T13AD , NCEP01T13D , NCEP01T15 , NCEP01T18 , NCEP01T18T , NCEP020N30GU , 10N60 , NCEP023N10D , NCEP023N10LL , NCEP023N85 , NCEP023N85D , NCEP02515K , NCEP02525F , NCEP02580 , NCEP02580F .

History: NCEP01T18 | RU8205G

Keywords - NCEP023N10 MOSFET datasheet

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