NCEP028N85D PDF and Equivalents Search

 

NCEP028N85D Specs and Replacement

Type Designator: NCEP028N85D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1472 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO263

NCEP028N85D substitution

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NCEP028N85D datasheet

 ..1. Size:876K  ncepower
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NCEP028N85D

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =200A DS D switching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

 ..2. Size:355K  ncepower
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NCEP028N85D

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.55m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒

 4.1. Size:876K  ncepower
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NCEP028N85D

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =200A DS D switching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

 6.1. Size:324K  ncepower
 ncep028n12ll.pdf pdf_icon

NCEP028N85D

NCEP028N12LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =230A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combin... See More ⇒

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Detailed specifications: NCEP023N10LL, NCEP023N85, NCEP023N85D, NCEP02515K, NCEP02525F, NCEP02580, NCEP02580F, NCEP028N85, 7N65, NCEP02T10D, NCEP033N85, NCEP033N85D, NCEP035N85GU, NCEP039N10, NCEP039N10D, NCEP039N10M, NCEP039N10MD

Keywords - NCEP028N85D MOSFET specs

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