NCEP045N10 Specs and Replacement
Type Designator: NCEP045N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 125 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 590 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220
NCEP045N10 substitution
- MOSFET ⓘ Cross-Reference Search
NCEP045N10 datasheet
ncep045n10 ncep045n10d.pdf
NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263... See More ⇒
ncep045n10.pdf
NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263... See More ⇒
ncep045n10ag.pdf
NCEP045N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical @ VGS=4.5V losses are m... See More ⇒
ncep045n10d.pdf
NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263... See More ⇒
Detailed specifications: NCEP039N10, NCEP039N10D, NCEP039N10M, NCEP039N10MD, NCEP040N10, NCEP040N10D, NCEP040N85, NCEP040N85D, IRFP260, NCEP045N10D, NCEP050N85, NCEP050N85D, NCEP055N85, NCEP055N85D, NCEP058N85, NCEP058N85D, NCEP065N85
Keywords - NCEP045N10 MOSFET specs
NCEP045N10 cross reference
NCEP045N10 equivalent finder
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