NCEP1570D
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP1570D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 200
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 3.8
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
TO263
NCEP1570D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP1570D
Datasheet (PDF)
..1. Size:316K ncepower
ncep1570 ncep1570d.pdf
http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
..2. Size:316K ncepower
ncep1570d.pdf
http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
6.1. Size:316K ncepower
ncep1570.pdf
http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
6.2. Size:987K ncepower
ncep1570gu.pdf
http://www.ncepower.com NCEP1570GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1570GU uses Super Trench technology that isV =150V,I =70ADS Duniquely optimized to provide the most efficient highR =13.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching
7.1. Size:707K ncepower
ncep1575gu.pdf
http://www.ncepower.com NCEP1575GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1575GU uses Super Trench technology that isV =150V,I =75ADS Duniquely optimized to provide the most efficient highR =13m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching p
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