NCEP40P80K Specs and Replacement
Type Designator: NCEP40P80K
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ -
Output Capacitance: 882 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO252
- MOSFET ⓘ Cross-Reference Search
NCEP40P80K datasheet
..1. Size:378K ncepower
ncep40p80k.pdf 
Pb Free Product http //www.ncepower.com NCEP40P80K NCE P-Channel Super Trench Power MOSFET Description The NCEP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
5.1. Size:504K ncepower
ncep40p80d.pdf
http //www.ncepower.com NCEP40P80D NCE P-Channel Super Trench Power MOSFET Description The NCEP40P80D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
5.2. Size:335K ncepower
ncep40p80g.pdf
http //www.ncepower.com NCEP40P80G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P80G uses Super Trench technology that is VDS =-40V,ID =-80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=9.0m (typical) @ VGS=-4.5V ... See More ⇒
7.1. Size:826K ncepower
ncep40p65gu.pdf
http //www.ncepower.com NCEP40P65GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)... See More ⇒
7.2. Size:498K ncepower
ncep40pt15d.pdf
http //www.ncepower.com NCEP40PT15D NCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
7.3. Size:542K ncepower
ncep40pt15g.pdf
http //www.ncepower.com NCEP40PT15G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5V DS(ON) GS ... See More ⇒
7.4. Size:661K ncepower
ncep40p60k.pdf
http //www.ncepower.com NCEP40P60K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60K uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G... See More ⇒
7.5. Size:657K ncepower
ncep40pt13gu.pdf
http //www.ncepower.com NCEP40PT13GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =4.8m (typical) @ V =-4.5V DS(ON... See More ⇒
7.6. Size:624K ncepower
ncep40pt13d.pdf
http //www.ncepower.com NCEP40PT13D NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13D uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.85m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.0m (typical) @ V =-4.5V DS(ON)... See More ⇒
7.7. Size:653K ncepower
ncep40pt12k.pdf
http //www.ncepower.com NCEP40PT12K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT12K uses Super Trench technology that is V =-40V,I =-120A DS D uniquely optimized to provide the most efficient high frequency R =4.55m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =7.0m (typical) @ V =-4.5V DS(ON)... See More ⇒
7.8. Size:933K ncepower
ncep40p65qu.pdf
http //www.ncepower.com NCEP40P65QU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)... See More ⇒
7.9. Size:374K ncepower
ncep40p07s.pdf
http //www.ncepower.com NCEP40P07S NCE P-Channel Super Trench Power MOSFET Description The NCEP40P07S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
7.10. Size:759K ncepower
ncep40p60g.pdf
http //www.ncepower.com NCEP40P60G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60G uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G... See More ⇒
7.11. Size:626K ncepower
ncep40p60q.pdf
http //www.ncepower.com NCEP40P60Q NCE P-Channel Super Trench Power MOSFET Description The NCEP40P60Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-40V,I =-60A DS D switching performance. Both conduction and switching power R =8.8m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely lo... See More ⇒
7.12. Size:688K ncepower
ncep40pt30vd.pdf
http //www.ncepower.com NCEP40PT30VD NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT30VD uses Super Trench technology that is V =-40V,I =-300A DS D uniquely optimized to provide the most efficient high R =1.6m , typical@ V =-10V DS(ON) GS frequency switching performance. Both conduction and R =2.2m , typical@ V =-4.5V DS(ON) GS switching p... See More ⇒
7.13. Size:656K ncepower
ncep40p35gu.pdf
http //www.ncepower.com NCEP40P35GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P35GU uses Super Trench technology that is V =-40V,I =-35A DS D uniquely optimized to provide the most efficient high frequency R =19.0m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =28.0m (typical) @ V =-4.5V DS(ON)... See More ⇒
7.14. Size:654K ncepower
ncep40p30k.pdf
http //www.ncepower.com NCEP40P30K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P30K uses Super Trench technology that is V =-40V,I =-30A DS D uniquely optimized to provide the most efficient high frequency R =22.5m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =31.5m (typical) @ V =-4.5V DS(ON) G... See More ⇒
7.15. Size:719K ncepower
ncep40p30q.pdf
http //www.ncepower.com NCEP40P30Q NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P30Q uses Super Trench technology that is V =-40V,I =-30A DS D uniquely optimized to provide the most efficient high frequency R =21.0m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =32.0m (typical) @ V =-4.5V DS(ON) G... See More ⇒
Detailed specifications: NCEP25N10AK, NCEP3040Q, NCEP3090GU, NCEP30T12G, NCEP30T13GU, NCEP4040Q, NCEP4065QU, NCEP40P80D, 20N50, NCEP40PT15D, NCEP40T11G, NCEP40T13GU, NCEP40T14G, NCEP40T15A, NCEP40T17A, NCEP6020AS, NCEP6080AG
Keywords - NCEP40P80K MOSFET specs
NCEP40P80K cross reference
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