All MOSFET. NCEP40T14G Datasheet

 

NCEP40T14G Datasheet and Replacement


   Type Designator: NCEP40T14G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 133 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 1950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: DFN5X6-8L
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NCEP40T14G Datasheet (PDF)

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NCEP40T14G

http://www.ncepower.com NCEP40T14GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T14G uses Super Trench technology that is VDS =40V,ID =140A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.6m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.3m (typical) @ VGS=4.5V losses are m

 5.1. Size:737K  ncepower
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NCEP40T14G

NCEP40T14Ahttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T14A uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q .DS(ON) gThis device is ideal for high-frequency switchi

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NCEP40T14G

Pb Free Producthttp://www.ncepower.com NCEP40T15ANCE N-Channel Super Trench Power MOSFET Description The NCEP40T15A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.2. Size:363K  ncepower
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NCEP40T14G

Pb Free Producthttp://www.ncepower.com NCEP40T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMB060N10LGS | IRF441 | AP9926GEO | RW1C020UN | GSM3050S | NVMFS5C682NL | STD4N62K3

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