NCEP60T12AK MOSFET Datasheet: N-Ch, 60V, 120A. Full specification with pinout and replacement list

NCEP60T12AK Specs and Replacement

   Type Designator: NCEP60T12AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252

NCEP60T12AK substitution

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NCEP60T12AK datasheet

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Pb Free Product http //www.ncepower.com NCEP60T12AK NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

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Pb Free Product http //www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O... See More ⇒

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Pb Free Product NCEP60T12AD http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AD uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =120A DS D frequency switching performance. Both conduction and R ... See More ⇒

5.1. Size:434K ncepower
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Pb Free Product http //www.ncepower.com NCEP60T12K NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒