2SK346 Specs and Replacement
Type Designator: 2SK346
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220AB
2SK346 substitution
- MOSFET ⓘ Cross-Reference Search
2SK346 datasheet
2sk346.pdf
isc N-Channel MOSFET Transistor 2SK346 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
2sk3462.pdf
2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSV) 2SK3462 Switching Regulator, DC/DC Converter and Unit mm Motor Drive Applications 4 V gate drive Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 100 A (VDS = 250 V) Enhancement mode V... See More ⇒
2sk3466.pdf
2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3466 Chopper Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs... See More ⇒
Detailed specifications: 2SK3109-AZ, 2SK312, 2SK313, 2SK3218-01, 2SK3221-AZ, 2SK3306, 2SK3424-ZK, 2SK345, 20N60, 2SK3483-ZK, 2SK3484-ZK, 2SK3492, 2SK3549N, 2SK3549W, 2SK3570-S, 2SK3570-Z, 2SK3570-ZK
Keywords - 2SK346 MOSFET specs
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