2SK3492 Datasheet and Replacement

Ordering number : ENN8279 2SK3492N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3492ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 8 ADrai

isc N-Channel MOSFET Transistor 2SK3492DFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3492IFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 180 V 1. GATE Gate-source voltage VGSS 12 V 2. DRAIN (HEAT SINK) DC (Note 1) ID

2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3499 Switching Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 0.4 (typ.) High forward transfer admittance: |Y | = 8.0 S (typ.) fs Low leakage current: I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode

2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV) 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON-resistance: RDS (ON) = 4.0 (typ.) High forward transfer admittance: |Yfs| = 0.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 400 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS

Ordering number : ENN69592SK3491N-Channel Silicon MOSFET2SK3491Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Low Qg. 2083B[2SK3491]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPPackage Dimensionsunit : mm2092B[2SK3491]6.5 2.35.0 0.540.

Ordering number : ENN69702SK3495N-Channel Silicon MOSFET2SK3495Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2087A 4V drive.[2SK3495]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : GateSpecifications2.54 2.54Absolute Maximum Ratings a

Power MOSFETs2SK3494N-channel enhancement mode MOSFET FeaturesUnit: mm4.60.210.50.3 Low on-resistance, low Qg1.40.1 High avalanche resistance Applications For PDP1.40.12.50.2 For high-speed switching0.80.12.540.30 to 0.3 Absolute Maximum Ratings TC = 25C (10.2)(8.9)Parameter Symbol Rating Unit1 2 3Drain-source surr

2SK3496-01MRFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless oth

isc N-Channel MOSFET Transistor 2SK3491DFEATURESDrain Current : I = 1A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 11(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3497FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 180V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK349DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching.Suitable for switchingregulator, DCDC control.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMET

isc N-Channel MOSFET Transistor 2SK3491IFEATURESDrain Current : I = 1A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 11(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid