2SK3570-S PDF and Equivalents Search

 ..1. Size:82K  1
 2sk3570 2sk3570-s 2sk3570-z 2sk3570-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3570 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3570 TO-220AB designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 2SK3570-S... See More ⇒

 ..2. Size:284K  inchange semiconductor
 2sk3570-s.pdf

isc N-Channel MOSFET Transistor 2SK3570-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 6.1. Size:358K  inchange semiconductor
 2sk3570-z.pdf

isc N-Channel MOSFET Transistor 2SK3570-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 6.2. Size:358K  inchange semiconductor
 2sk3570-zk.pdf

isc N-Channel MOSFET Transistor 2SK3570-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 7.1. Size:45K  kexin
 2sk3570.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3570 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =12 m MAX. (VGS =10V, ID =24A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 23 nC TYP. (VDD =16V, VGS =10V, ID =48A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount dev... See More ⇒

 7.2. Size:290K  inchange semiconductor
 2sk3570.pdf

isc N-Channel MOSFET Transistor 2SK3570 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒