All MOSFET. 2SK3570-ZK Datasheet

 

2SK3570-ZK MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3570-ZK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO263

 2SK3570-ZK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3570-ZK Datasheet (PDF)

 ..1. Size:82K  1
 2sk3570 2sk3570-s 2sk3570-z 2sk3570-zk.pdf

2SK3570-ZK 2SK3570-ZK

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3570SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3570 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3570 TO-220ABdesigned for low voltage high current applications such asDC/DC converter with synchronous rectifier.2SK3570-S

 ..2. Size:358K  inchange semiconductor
 2sk3570-zk.pdf

2SK3570-ZK 2SK3570-ZK

isc N-Channel MOSFET Transistor 2SK3570-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 5.1. Size:358K  inchange semiconductor
 2sk3570-z.pdf

2SK3570-ZK 2SK3570-ZK

isc N-Channel MOSFET Transistor 2SK3570-ZFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 6.1. Size:284K  inchange semiconductor
 2sk3570-s.pdf

2SK3570-ZK 2SK3570-ZK

isc N-Channel MOSFET Transistor 2SK3570-SFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 7.1. Size:45K  kexin
 2sk3570.pdf

2SK3570-ZK

SMD Type MOSFETMOS Field Effect Transistor2SK3570TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 =12 m MAX. (VGS =10V, ID =24A)+0.10.1max1.27-0.1Low gate chargeQG = 23 nC TYP. (VDD =16V, VGS =10V, ID =48A)+0.10.81-0.1Built-in gate protection diode2.541Gate+0.22.54-0.2 +0.1 +0.2Surface mount dev

 7.2. Size:290K  inchange semiconductor
 2sk3570.pdf

2SK3570-ZK 2SK3570-ZK

isc N-Channel MOSFET Transistor 2SK3570FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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