2SK3571-Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3571-Z
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 48
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
TO263
2SK3571-Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3571-Z
Datasheet (PDF)
..1. Size:82K 1
2sk3571 2sk3571-s 2sk3571-z 2sk3571-zk.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3571SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3571 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3571 TO-220ABdesigned for low voltage high current applications such asDC/DC converter with synchronous rectifier.2SK3571-S
..2. Size:358K inchange semiconductor
2sk3571-z.pdf
isc N-Channel MOSFET Transistor 2SK3571-ZFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
0.1. Size:358K inchange semiconductor
2sk3571-zk.pdf
isc N-Channel MOSFET Transistor 2SK3571-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
6.1. Size:283K inchange semiconductor
2sk3571-s.pdf
isc N-Channel MOSFET Transistor 2SK3571-SFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
7.1. Size:44K kexin
2sk3571.pdf
SMD Type MOSFETMOS Field Effect Transistor2SK3571TO-263Unit: mm+0.24.57-0.2+0.11.27-0.1Features4.5V drive available.Low on-state resistance,RDS(on)1 =9m MAX. (VGS =10 V, ID =24A) +0.10.1max1.27-0.1Low gate charge+0.10.81-0.1QG = 21 nC TYP. (VDD =16V, VGS =10V, ID =48A)2.541Gate+0.2Built-in gate protection diode2.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22
7.2. Size:290K inchange semiconductor
2sk3571.pdf
isc N-Channel MOSFET Transistor 2SK3571FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
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