2SK3815 Specs and Replacement
Type Designator: 2SK3815
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 85 nS
Cossⓘ -
Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO262
TO263
- MOSFET ⓘ Cross-Reference Search
2SK3815 datasheet
..1. Size:59K 1
2sk3815.pdf 
Ordering number EN8053A 2SK3815 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3815 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings U... See More ⇒
0.1. Size:357K inchange semiconductor
2sk3815s.pdf
isc N-Channel MOSFET Transistor 2SK3815S FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
0.2. Size:283K inchange semiconductor
2sk3815l.pdf
isc N-Channel MOSFET Transistor 2SK3815L FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.1. Size:40K 1
2sk3818.pdf
Ordering number ENN8056 2SK3818 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3818 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS... See More ⇒
8.2. Size:37K 1
2sk3819.pdf
Ordering number ENN8057 2SK3819 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3819 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS... See More ⇒
8.3. Size:258K sanyo
2sk3816.pdf
Ordering number ENN8054 2SK3816 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3816 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS... See More ⇒
8.4. Size:258K sanyo
2sk3817.pdf
Ordering number ENN8055 2SK3817 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3817 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS... See More ⇒
8.5. Size:268K nec
2sk3812-zp.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.6. Size:244K nec
2sk3814-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.7. Size:266K nec
2sk3811-zp.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.8. Size:242K nec
2sk3813-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.9. Size:355K inchange semiconductor
2sk3814.pdf
isc N-Channel MOSFET Transistor 2SK3814 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.10. Size:357K inchange semiconductor
2sk3818s.pdf
isc N-Channel MOSFET Transistor 2SK3818S FEATURES Drain Current I = 74A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.11. Size:356K inchange semiconductor
2sk3819s.pdf
isc N-Channel MOSFET Transistor 2SK3819S FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.12. Size:355K inchange semiconductor
2sk3813.pdf
isc N-Channel MOSFET Transistor 2SK3813 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.13. Size:357K inchange semiconductor
2sk3812-zp.pdf
isc N-Channel MOSFET Transistor 2SK3812-ZP FEATURES Drain Current I = 110A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 1.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.14. Size:357K inchange semiconductor
2sk3817s.pdf
isc N-Channel MOSFET Transistor 2SK3817S FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.15. Size:283K inchange semiconductor
2sk3817l.pdf
isc N-Channel MOSFET Transistor 2SK3817L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.16. Size:287K inchange semiconductor
2sk3814-z.pdf
isc N-Channel MOSFET Transistor 2SK3814-Z FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.17. Size:282K inchange semiconductor
2sk3816l.pdf
isc N-Channel MOSFET Transistor 2SK3816L FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.18. Size:283K inchange semiconductor
2sk3819l.pdf
isc N-Channel MOSFET Transistor 2SK3819L FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.19. Size:283K inchange semiconductor
2sk3818l.pdf
isc N-Channel MOSFET Transistor 2SK3818L FEATURES Drain Current I = 74A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.20. Size:357K inchange semiconductor
2sk3811-zp.pdf
isc N-Channel MOSFET Transistor 2SK3811-ZP FEATURES Drain Current I = 110A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.21. Size:287K inchange semiconductor
2sk3813-z.pdf
isc N-Channel MOSFET Transistor 2SK3813-Z FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.22. Size:356K inchange semiconductor
2sk3816s.pdf
isc N-Channel MOSFET Transistor 2SK3816S FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
Detailed specifications: 2SK3574-Z, 2SK3574-ZK, 2SK3579-01MR, 2SK3617, 2SK3618, 2SK3705, 2SK3706, 2SK3759, IRF9540, 2SK3818, 2SK3819, 2SK3892, 2SK3919-ZK, 2SK3977, 2SK3978, 2SK4086LS, 2SK412
Keywords - 2SK3815 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
