STU06L01 MOSFET. Datasheet pdf. Equivalent
Type Designator: STU06L01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 42 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 6 A
Total Gate Charge (Qg): 18 nC
Drain-Source Capacitance (Cd): 25 pF
Maximum Drain-Source On-State Resistance (Rds): 0.353 Ohm
STU06L01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STU06L01 Datasheet (PDF)
0.1. stu06l01 std06l01.pdf 
Size:150K _samhop
STU06L01GreenProductSTD06L01aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.353 @ VGS=10VTO-252 and TO-251 Package.100V 6A 553 @ VGS=4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO
Datasheet: FDD2572 , FDD2572_F085 , FDD2582 , FDD2670 , STU09N25 , FDD26AN06A0_F085 , FDD306P , FDD3510H , IRFP250N , FDD3670 , STU04N20 , FDD3672 , STU03N20 , FDD3672_F085 , STU03L07 , STU03L01 , FDD3680 .
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MOSFET: IPB17N25S3-100 | IPB160N04S4L-H1 | IPB140N08S4-04 | IPB120P04P4-04 | IPB120N08S4-04 | IPB120N08S4-03 | IPB120N04S4L-02 | IPB120N04S4-04 | IPB120N03S4L-03 | IPB110P06LM | IPB060N15N5 | IPB032N10N5 | IPB024N10N5 | IPB019N08N5 | IPB017N10N5LF | IPAW70R950CE