STU06L01 Datasheet and Replacement
Type Designator: STU06L01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 6 A
Qg ⓘ - Total Gate Charge: 1 nC
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.353 Ohm
Package: TO252 DPAK
STU06L01 substitution
STU06L01 Datasheet (PDF)
stu06l01 std06l01.pdf

STU06L01GreenProductSTD06L01aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.353 @ VGS=10VTO-252 and TO-251 Package.100V 6A 553 @ VGS=4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO
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