2SK3919-ZK MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK3919-ZK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 64 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO252

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2SK3919-ZK Datasheet (PDF)

..1. Size:167K 1
2sk3919 2sk3919-zk.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3919SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3919 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3919-ZK TO-252 (MP-3ZK) applications such as DC/DC co

..2. Size:286K inchange semiconductor
2sk3919-zk.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3919-ZKFEATURESDrain Current : I = 64A@ T =25D CDrain Source Voltage: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

7.1. Size:97K tysemi
2sk3919.pdf pdf_icon

SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICProduct specification2SK3919TO-252Unit: mm+0.16.50+0.15 2.30-0.1-0.15+0.85.30+0.2 0.50-0.7-0.2FeaturesLow on-state resistanceRDS(on)1 =5.6 m MAX. (VGS =10 V, ID =32 A)0.127Low Ciss: Ciss = 2050 pF TYP. 0.80+0.1 max-0.15 V drive available2.3 0.60+0.1 1Gate-0.1+0.154.60-0.152Drain3Source

7.2. Size:354K inchange semiconductor
2sk3919.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3919FEATURESDrain Current : I = 64A@ T =25D CDrain Source Voltage: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.1. Size:193K toshiba
2sk3911.pdf pdf_icon

2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 500 A (VDS = 600 V) Enhancement model: Vth = 2

8.2. Size:160K nec
2sk3918.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3918SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3918-ZK TO-252 (MP-3ZK) applications such as DC/DC co

8.3. Size:207K fuji
2sk3915-01mr.pdf pdf_icon

2SK3915-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

8.4. Size:121K fuji
2sk3917-01mr.pdf pdf_icon

2SK3917-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

8.5. Size:206K fuji
2sk3916-01.pdf pdf_icon

2SK3916-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220ABHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless

8.6. Size:205K fuji
2sk3914-01.pdf pdf_icon

2SK3914-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220ABHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless

8.7. Size:190K fuji
2sk3913-01mr.pdf pdf_icon

2SK3913-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesFeaturesOutline Drawings [mm]High speed switching Low on-resistanceTO-220FNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

8.8. Size:355K inchange semiconductor
2sk3918.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3918FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.9. Size:287K inchange semiconductor
2sk3918-zk.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3918-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.10. Size:280K inchange semiconductor
2sk3915-01mr.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3915-01MRFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.11. Size:286K inchange semiconductor
2sk3911.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3911FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.32(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.12. Size:280K inchange semiconductor
2sk3917-01mr.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3917-01MRFEATURESDrain Current : I = 4.3A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.13. Size:289K inchange semiconductor
2sk3916-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3916-01FEATURESDrain Current : I = 4.3A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.14. Size:289K inchange semiconductor
2sk3914-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3914-01FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.15. Size:280K inchange semiconductor
2sk3913-01mr.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3913-01MRFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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2SK3919-ZK MOSFET. Datasheet pdf. Equivalent

2SK3919-ZK Datasheet (PDF)

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