2SK4121LS Specs and Replacement
Type Designator: 2SK4121LS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 54 nS
Cossⓘ -
Output Capacitance: 165 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
Package: TO220F
- MOSFET ⓘ Cross-Reference Search
2SK4121LS datasheet
..1. Size:56K 1
2sk4121ls.pdf 
Ordering number ENA0824A 2SK4121LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4121LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
..2. Size:279K inchange semiconductor
2sk4121ls.pdf
isc N-Channel MOSFET Transistor 2SK4121LS FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.56 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.1. Size:57K 1
2sk4123ls.pdf
Ordering number ENA0826A 2SK4123LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4123LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
8.3. Size:57K 1
2sk4122ls.pdf
Ordering number ENA0825A 2SK4122LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4122LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
8.4. Size:57K 1
2sk4120ls.pdf
Ordering number ENA0823A 2SK4120LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4120LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
8.5. Size:66K sanyo
2sk4124.pdf
Ordering number ENA0746A 2SK4124 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4124 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi... See More ⇒
8.6. Size:66K sanyo
2sk4126.pdf
Ordering number ENA0748A 2SK4126 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4126 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi... See More ⇒
8.7. Size:66K sanyo
2sk4125.pdf
Ordering number ENA0747A 2SK4125 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4125 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi... See More ⇒
8.8. Size:272K inchange semiconductor
2sk4124.pdf
isc N-Channel MOSFET Transistor 2SK4124 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.9. Size:280K inchange semiconductor
2sk4123ls.pdf
isc N-Channel MOSFET Transistor 2SK4123LS FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.10. Size:273K inchange semiconductor
2sk4126.pdf
isc N-Channel MOSFET Transistor 2SK4126 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.11. Size:285K inchange semiconductor
2sk412.pdf
isc N-Channel MOSFET Transistor 2SK412 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
8.12. Size:279K inchange semiconductor
2sk4122ls.pdf
isc N-Channel MOSFET Transistor 2SK4122LS FEATURES Drain Current I = 15.5A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
8.13. Size:272K inchange semiconductor
2sk4125.pdf
isc N-Channel MOSFET Transistor 2SK4125 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.61 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.14. Size:280K inchange semiconductor
2sk4120ls.pdf
isc N-Channel MOSFET Transistor 2SK4120LS FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.68 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
Detailed specifications: 2SK3819, 2SK3892, 2SK3919-ZK, 2SK3977, 2SK3978, 2SK4086LS, 2SK412, 2SK4120LS, IRFP260, 2SK4122LS, 2SK4123LS, 2SK4179, 2SK4203LS, 2SK4204LS, 2SK4227JS, 2SK430L, 2SK430S
Keywords - 2SK4121LS MOSFET specs
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