60NM60G-T47 Datasheet and Replacement
Type Designator: 60NM60G-T47
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 500 nS
Cossⓘ - Output Capacitance: 2730 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO247
60NM60G-T47 substitution
60NM60G-T47 Datasheet (PDF)
60nm60l 60nm60g.pdf

UNISONIC TECHNOLOGIES CO., LTD 60NM60 Power MOSFET 60A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 60NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC con
sty60nm60.pdf

STY60NM60N-CHANNEL 600V - 0.050 - 60A Max247Zener-Protected MDmeshPower MOSFETTYPE VDSS RDS(on) IDSTY60NM60 600V
isc60nm60l.pdf

isc N-Channel MOSFET Transistor ISC60NM60LFEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Datasheet: 2SK810 , 2SK811 , 2SK895 , 2SK896 , FMW60N070S2HF , 60NM60L-T3P , 60NM60L-T47 , 60NM60G-T3P , P60NF06 , ISC60NM60L , ISCD3NK80Z , ISCNH060D , FDN363N , ISCNH363N , ISCNH370W , ISCNH371D , ISCNH372B .
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