ISCNH363N Specs and Replacement
Type Designator: ISCNH363N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 235 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO3PB
- MOSFET ⓘ Cross-Reference Search
ISCNH363N datasheet
..1. Size:272K inchange semiconductor
iscnh363n.pdf 
isc N-Channel MOSFET Transistor ISCNH363N FEATURES Drain Current I = 59A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 36m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒
8.1. Size:255K inchange semiconductor
iscnh320k.pdf
isc N-Channel MOSFET Transistor ISCNH320K FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 135m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed Improved dv/dt capab... See More ⇒
8.2. Size:286K inchange semiconductor
iscnh371d.pdf
isc N-Channel MOSFET Transistor ISCNH371D FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
8.3. Size:356K inchange semiconductor
iscnh377b.pdf
isc N-Channel MOSFET Transistor ISCNH377B FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.4. Size:288K inchange semiconductor
iscnh379p.pdf
isc N-Channel MOSFET Transistor ISCNH379P FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 10 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.5. Size:580K inchange semiconductor
iscnh375w.pdf
isc N-Channel MOSFET Transistor ISCNH375W FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.6. Size:260K inchange semiconductor
iscnh342p.pdf
isc N-Channel MOSFET Transistor ISCNH342P FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed ABSOLUTE MAXIMUM RATINGS(... See More ⇒
8.7. Size:261K inchange semiconductor
iscnh327p.pdf
isc N-Channel MOSFET Transistor ISCNH327P FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage- V = 85V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
8.8. Size:329K inchange semiconductor
iscnh340b.pdf
isc N-Channel MOSFET Transistor ISCNH340B FEATURES Drain Current I = 135A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
8.9. Size:246K inchange semiconductor
iscnh345p.pdf
isc N-Channel MOSFET Transistor ISCNH345P FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC co... See More ⇒
8.10. Size:251K inchange semiconductor
iscnh346f.pdf
isc N-Channel MOSFET Transistor ISCNH346F FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. ABSOLUTE... See More ⇒
8.11. Size:356K inchange semiconductor
iscnh372b.pdf
isc N-Channel MOSFET Transistor ISCNH372B FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
8.12. Size:302K inchange semiconductor
iscnh342w.pdf
isc N-Channel MOSFET Transistor ISCNH342W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed ABSOLUTE MAXIMUM RATINGS(... See More ⇒
8.13. Size:304K inchange semiconductor
iscnh325w.pdf
isc N-Channel MOSFET Transistor ISCNH325W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 90m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒
8.14. Size:307K inchange semiconductor
iscnh339d.pdf
isc N-Channel MOSFET Transistor ISCNH339D FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB... See More ⇒
8.15. Size:286K inchange semiconductor
iscnh374d.pdf
isc N-Channel MOSFET Transistor ISCNH374D FEATURES Drain Current I = 44A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.16. Size:283K inchange semiconductor
iscnh376l.pdf
isc N-Channel MOSFET Transistor ISCNH376L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.17. Size:269K inchange semiconductor
iscnh310p.pdf
isc N-Channel MOSFET Transistor ISCNH310P FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
8.18. Size:261K inchange semiconductor
iscnh373f.pdf
isc N-Channel MOSFET Transistor ISCNH373F FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 6.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC conv... See More ⇒
8.19. Size:304K inchange semiconductor
iscnh370w.pdf
isc N-Channel MOSFET Transistor ISCNH370W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 95m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒
8.20. Size:304K inchange semiconductor
iscnh328w.pdf
isc N-Channel MOSFET Transistor ISCNH328W FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒
Detailed specifications: 60NM60L-T3P, 60NM60L-T47, 60NM60G-T3P, 60NM60G-T47, ISC60NM60L, ISCD3NK80Z, ISCNH060D, FDN363N, 2SK3568, ISCNH370W, ISCNH371D, ISCNH372B, ISCNH373F, ISCNH374D, ISCNH375W, ISCNH376L, ISCNH377B
Keywords - ISCNH363N MOSFET specs
ISCNH363N cross reference
ISCNH363N equivalent finder
ISCNH363N pdf lookup
ISCNH363N substitution
ISCNH363N replacement
Can't find your MOSFET?
Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
