All MOSFET. ISCNH372B Datasheet

 

ISCNH372B MOSFET. Datasheet pdf. Equivalent


   Type Designator: ISCNH372B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO263

 ISCNH372B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ISCNH372B Datasheet (PDF)

 ..1. Size:356K  inchange semiconductor
 iscnh372b.pdf

ISCNH372B ISCNH372B

isc N-Channel MOSFET Transistor ISCNH372BFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 7.1. Size:286K  inchange semiconductor
 iscnh371d.pdf

ISCNH372B ISCNH372B

isc N-Channel MOSFET Transistor ISCNH371DFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 7.2. Size:356K  inchange semiconductor
 iscnh377b.pdf

ISCNH372B ISCNH372B

isc N-Channel MOSFET Transistor ISCNH377BFEATURESDrain Current : I = 200A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 7.3. Size:288K  inchange semiconductor
 iscnh379p.pdf

ISCNH372B ISCNH372B

isc N-Channel MOSFET Transistor ISCNH379PFEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 10(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 7.4. Size:580K  inchange semiconductor
 iscnh375w.pdf

ISCNH372B ISCNH372B

isc N-Channel MOSFET Transistor ISCNH375WFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)@V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 7.5. Size:286K  inchange semiconductor
 iscnh374d.pdf

ISCNH372B ISCNH372B

isc N-Channel MOSFET Transistor ISCNH374DFEATURESDrain Current : I = 44A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 7.6. Size:283K  inchange semiconductor
 iscnh376l.pdf

ISCNH372B ISCNH372B

isc N-Channel MOSFET Transistor ISCNH376LFEATURESDrain Current : I = 72A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 7.7. Size:261K  inchange semiconductor
 iscnh373f.pdf

ISCNH372B ISCNH372B

isc N-Channel MOSFET Transistor ISCNH373FFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC conv

 7.8. Size:304K  inchange semiconductor
 iscnh370w.pdf

ISCNH372B ISCNH372B

isc N-Channel MOSFET Transistor ISCNH370WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 95m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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