SWMI3N90U PDF and Equivalents Search

 

SWMI3N90U Specs and Replacement

Type Designator: SWMI3N90U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 183.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.8 Ohm

Package: TO251M

SWMI3N90U substitution

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SWMI3N90U datasheet

 ..1. Size:887K  1
 sw3n90u swi3n90u swmi3n90u swd3n90u.pdf pdf_icon

SWMI3N90U

SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS 900V ID 3A High ruggedness Low RDS(ON) (Typ 4.8 )@VGS=10V RDS(ON) 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou... See More ⇒

 ..2. Size:809K  samwin
 swi3n90u swmi3n90u swd3n90u.pdf pdf_icon

SWMI3N90U

SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS 900V ID 3A High ruggedness Low RDS(ON) (Typ 4.8 )@VGS=10V RDS(ON) 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou... See More ⇒

Detailed specifications: IXFY26N30X3, IXFA26N30X3, IXFP26N30X3, MMD60R900QRH, STF23N80K5, STF6N90K5, SW3N90U, SWI3N90U, 7N60, SWD3N90U, SCT10N120, SCT20N120, STB100N6F7, STB10LN80K5, STB15N65M5, STB15NK50Z, STB15NK50Z-1

Keywords - SWMI3N90U MOSFET specs

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