All MOSFET. STQ2HNK60Z-AP Datasheet

 

STQ2HNK60Z-AP Datasheet and Replacement


   Type Designator: STQ2HNK60Z-AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO252
 

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STQ2HNK60Z-AP Datasheet (PDF)

 ..1. Size:884K  st
 std2hnk60z std2hnk60z-1 stf2hnk60z stq2hnk60z-ap.pdf pdf_icon

STQ2HNK60Z-AP

STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STD2HNK60Z-APN-channel 600 V, 4.4 , 2 A Zener-protected SuperMESH Power MOSFET in TO-92-TO-220FP-DPAK-IPAK packagesDatasheet production dataFeatures TABRDS(on) 3Order codes VDSS max. ID PTOT3121DPAKSTD2HNK60Z 600 V

 4.1. Size:827K  st
 std2hnk60z std2hnk60z-1 stf2hnk60z stq2hnk60zr-ap.pdf pdf_icon

STQ2HNK60Z-AP

STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STQ2HNK60ZR-APDatasheetN-channel 600 V, 3.5 typ., 2 A SuperMESH Power MOSFETs in DPAK, IPAK, TO-220FP and TO-92 packagesFeaturesVDS RDS(on)max. IDOrder code PackageSTD2HNK60Z DPAKSTD2HNK60Z-1 2 A IPAK600 V 4.8 STF2HNK60Z TO-220FPSTQ2HNK60ZR-AP 0.5 A TO-92 Extremely high dv/dt capability 100% avalanche testedD(2, TA

 4.2. Size:501K  st
 std2hnk60z stf2hnk60z stq2hnk60zr-ap.pdf pdf_icon

STQ2HNK60Z-AP

STD2HNK60Z - STD2HNK60Z-1STF2HNK60Z - STQ2HNK60ZR-APN-channel 600V - 4.4 - 2A - TO-92/TO-220FP/DPAK/IPAKZener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOT3321STD2HNK60Z 600V

Datasheet: STB90NF03L-1 , STB9NK70Z , STD10LN80K5 , STD12N60DM2AG , STD13N50DM2AG , STD13N60DM2 , STD15N50M2AG , STD20NF06L-1 , IRFP460 , STD4LN80K5 , STD4N90K5 , STD5N60DM2 , STD64N4F6AG , STD7LN80K5 , STD8N60DM2 , STF11N60M2-EP , STF11N65M2-045Y .

History: NCEP026N10T | BUZ103SL

Keywords - STQ2HNK60Z-AP MOSFET datasheet

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