STQ2HNK60Z-AP MOSFET. Datasheet pdf. Equivalent
Type Designator: STQ2HNK60Z-AP
Marking Code: Q2HNK60ZR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 38 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO252
STQ2HNK60Z-AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STQ2HNK60Z-AP Datasheet (PDF)
std2hnk60z std2hnk60z-1 stf2hnk60z stq2hnk60z-ap.pdf
STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STD2HNK60Z-APN-channel 600 V, 4.4 , 2 A Zener-protected SuperMESH Power MOSFET in TO-92-TO-220FP-DPAK-IPAK packagesDatasheet production dataFeatures TABRDS(on) 3Order codes VDSS max. ID PTOT3121DPAKSTD2HNK60Z 600 V
std2hnk60z std2hnk60z-1 stf2hnk60z stq2hnk60zr-ap.pdf
STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STQ2HNK60ZR-APDatasheetN-channel 600 V, 3.5 typ., 2 A SuperMESH Power MOSFETs in DPAK, IPAK, TO-220FP and TO-92 packagesFeaturesVDS RDS(on)max. IDOrder code PackageSTD2HNK60Z DPAKSTD2HNK60Z-1 2 A IPAK600 V 4.8 STF2HNK60Z TO-220FPSTQ2HNK60ZR-AP 0.5 A TO-92 Extremely high dv/dt capability 100% avalanche testedD(2, TA
std2hnk60z stf2hnk60z stq2hnk60zr-ap.pdf
STD2HNK60Z - STD2HNK60Z-1STF2HNK60Z - STQ2HNK60ZR-APN-channel 600V - 4.4 - 2A - TO-92/TO-220FP/DPAK/IPAKZener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOT3321STD2HNK60Z 600V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STS4DPFS30L | AOLF66910 | FTA04N60B | MDP1922TH | FSS273 | FDU8880
History: STS4DPFS30L | AOLF66910 | FTA04N60B | MDP1922TH | FSS273 | FDU8880
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