STF16N60M6 MOSFET. Datasheet pdf. Equivalent
Type Designator: STF16N60M6
Marking Code: 16N60M6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.75 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16.7 nC
trⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 33 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: TO220F
STF16N60M6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STF16N60M6 Datasheet (PDF)
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