STFU23N80K5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STFU23N80K5
Marking Code: 23N80K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 33 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220F
STFU23N80K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STFU23N80K5 Datasheet (PDF)
..1. Size:683K st
stfu23n80k5.pdf
stfu23n80k5.pdf
STFU23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTFU23N80K5 800 V 0.28 16 A 35 W Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 321 100% avalanche tested
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: STF26N65DM2 | SSF90R240SFD
