All MOSFET. STP110N8F7 Datasheet

 

STP110N8F7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP110N8F7
   Marking Code: 110N8F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 46.8 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 653 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220

 STP110N8F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP110N8F7 Datasheet (PDF)

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 stp110n8f7.pdf

STP110N8F7 STP110N8F7

STP110N8F7 N-channel 80 V, 6.4 m typ., 80 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 m 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Swit

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 stp110n8f6.pdf

STP110N8F7 STP110N8F7

STP110N8F6N-channel 80 V, 0.0056 typ.,110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max ID PTOTTABSTP110N8F6 80 V 0.0065 110 A 200 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schemat

 5.2. Size:227K  inchange semiconductor
 stp110n8f6.pdf

STP110N8F7 STP110N8F7

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP110N8F6FEATURESVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 7.1. Size:626K  1
 stp110n7f6.pdf

STP110N8F7 STP110N8F7

STP110N7F6N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTTABSTP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schem

 7.2. Size:645K  st
 stp110n7f6.pdf

STP110N8F7 STP110N8F7

STP110N7F6N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTTABSTP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schem

 7.3. Size:647K  st
 stp110n55f6.pdf

STP110N8F7 STP110N8F7

STP110N55F6N-channel 55 V, 4.5 typ., 110 A STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTP110N55F6 55 V 5.2 m 110 A Low gate charge Very low on-resistance321 High avalanche ruggednessTO-220Applications Switching applicationsDescriptionFigure 1. Internal schematic diagr

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 stf110n10f7 stp110n10f7.pdf

STP110N8F7 STP110N8F7

STF110N10F7, STP110N10F7N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max ID PTOTSTF110N10F7 45 A 30 WTAB100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance3 32 21 1 100% avalanche testedTO-220FP TO-220Applications Sw

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HUF76139P3

 

 
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