STW33N60DM2 Datasheet and Replacement
Type Designator: STW33N60DM2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 87 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO247
STW33N60DM2 substitution
STW33N60DM2 Datasheet (PDF)
stb33n60dm2 stp33n60dm2 stw33n60dm2.pdf

STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 typ., 24 A MDmesh DM2 Power MOSFET in DPAK, TO-220 and TO-247 packages Datasheet - production data Features Order code V @ T R max. I DS Jmax. DS(on) DSTB33N60DM2 650 V 0.130 24 A STP33N60DM2 650 V 0.130 24 A STW33N60DM2 650 V 0.130 24 A Fast-recovery body diode Extremely low gate charg
stf33n60m2 sti33n60m2 stp33n60m2 stw33n60m2.pdf

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID32 3TJmax max1212I PAKTO-220FPSTF33N60M2 26 A(1)TABSTI33N60M2650 V 0.125 STP33N60M2 26 ASTW33N60M233221
Datasheet: STS8DN6LF6AG , STU5N95K5 , STU6N60DM2 , STW20N90K5 , STW20N95DK5 , STW25N60M2-EP , STW26N60M2 , STW28N60DM2 , AO3407 , STW35N60DM2 , STW35N65DM2 , STW36N60M6 , STW37N60DM2AG , STW40N90K5 , STW43N60DM2 , STW45N60DM2AG , STW45N60DM6 .
History: NTMFS5C430NLT1G | GSM4925WS | CJ3406 | SWB072R08ET | DH009N02P | 4N80G-TND-R | STL23NM50N
Keywords - STW33N60DM2 MOSFET datasheet
STW33N60DM2 cross reference
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History: NTMFS5C430NLT1G | GSM4925WS | CJ3406 | SWB072R08ET | DH009N02P | 4N80G-TND-R | STL23NM50N



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