STW36N60M6 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW36N60M6
Marking Code: 36N60M6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.75 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 44.3 nC
trⓘ - Rise Time: 5.3 nS
Cossⓘ - Output Capacitance: 93 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
STW36N60M6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW36N60M6 Datasheet (PDF)
stp36n60m6 stw36n60m6.pdf
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stw36nm60n.pdf
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STB36NM60ND, STW36NM60NDAutomotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFETs (with fast diode) in D2PAK and TO-247 packagesDatasheet - production dataFeaturesVDSS @TJ RDS(on) Order codes IDmax. max.TABSTB36NM60ND650 V 0.110 29 ASTW36NM60ND3 Designed for automotive applications and 1 32 AEC-Q101 qualified1 100% avalanche t
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STP36N55M5 STW36N55M5N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packagesDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTJmax maxTABSTP36N55M5600 V
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
